Taiwan Semiconductor N/A Emitter reverse vol BC857CRF Data Sheet

 

 

 

 

                 

 

 

 

— 

Ideally suited for automatic insertion 

— 

Epitaxial planar die construction   

— 

For switching, AF driver and amplifier 
applications 

— 

Complementary PNP type available(BC846) 

— 

Qualified to AEC-Q101 standards for high 
reliability 

— 

Case: SOT-23, Molded plastic   

— 

Case material: molded plastic. UL flammability 
classification rating 94V-0 

— 

Moisture sensitivity: Level 1 per J-STD-020C 

— 

Terminals: Solderable per MIIL-STD-202,   

Method 208 

— 

Lead free plating

 

— 

Marking & Polarity: See diagram 

— 

Weight: 0.008 gram (approx.

)

 

Dimensions in inches and (millimeters) 

 

Collector-base breakdown voltage    I

C

=10uA, I

E

=0 V

CBO

 

-80 -50 -30 V 

Collector-emitter breakdown voltage    I

C

=10mA, I

B

=0 V

CEO

 

-65 -45 -30 V 

Collector current 

I

CM

 

-0.1 A 

Power dissipation (Tamb=25

o

C) (Note 1) 

P

CM

 

0.2 W 

Emitter-base breakdown voltage     I

E

=10uA, I

C

=0 V

EBO

 

-5 V

 

Collector cut-off current                          V

CB

=-70V I

E

=0 

                                                                    V

CB

=-45V I

E

=0 

                                                                    V

CB

=-25V I

E

=0 

 

I

CBO

 

-0.1 

 

 

-0.1 

 

 
 

-0.1 

 

uA

 

Collector cut-off current                          V

CE

=-60V I

B

=0 

                                                                    V

CE

=-40V I

B

=0 

                                                                    V

CE

=-25V I

B

=0 

 

I

CEO

 

-0.1 

 

 

-0.1 

 

 
 

-0.1 

 

uA

 

Emitter cut-off current                              V

EB

=-5V I

C

=0  

I

EBO

 

-0.1 uA

 

Collector-emitter saturation voltage I

C

=-100mA, I

B

=-5mA  V

CE

(sat)

-0.5 V 

Base-emitter saturation voltage   I

C

=-100mA, I

B

=-5mA V

BE

(sat)

-1.1 V 

Transition frequency   V

CE

=-5V I

C

=-10mA f=100MHz 

f

T

 

100 MHz

Operating and Storage Temperature Range 

T

J

, T

STG

-55 to + 150 

o

C 

 

 

 

DC current gain BC846A,847A,848A 
              BC846B,847B,848B  V

CE

=-5V I

C

=-2mA

               BC847C / BC848C 

 

H

FE(1)

 

125 
220 
420

 

250 
475 
800

 

 

 

DEVICE MARKING 

 

 

 

 

 

BC856A=3A, BC856B=3B, BC857A=3E, BC857B=3F, BC857C=3G,BC858A=3J, BC858B=3K, BC858C=3L

 

Note 1: Transistor mounted on an FR4 Printed-circuit board. 

 

 

Version: B07