Infineon Technologies N/A BC 859-B PNP Case type SOT 23 I(C) BC859B Data Sheet
Product codes
BC859B
2007-09-25
3
BC856...-BC860...
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
V
CEO
65
45
30
V
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
V
CBO
80
50
30
Emitter-base voltage
V
EBO
5
Collector current
I
C
100
mA
Peak collector current
I
CM
200
Total power dissipation
T
S
≤
71 °C, BC856-BC860
T
S
≤
128 °C, BC857BF-BC858BF
T
S
≤
135 °C, BC857BL3, BC860BL3
T
S
≤
124 °C, BC856W-BC860W
P
tot
330
250
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
R
thJS
≤
240
≤
90
≤
60
≤
105
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance