Infineon Technologies NPN-High voltage-transistor SMBTA 42 NPN Case type SMBTA42 Data Sheet
Product codes
SMBTA42
2011-12-19
2
SMBTA42/MMBTA42
Electrical Characteristics
at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
300
-
-
V
Collector-base breakdown voltage
I
I
C
= 100 µA, I
E
= 0
V
(BR)CBO
300
-
-
Emitter-base breakdown voltage
I
I
E
= 100 µA, I
C
= 0
V
(BR)EBO
6
-
-
Collector-base cutoff current
V
V
CB
= 200 V, I
E
= 0
V
CB
= 200 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
V
V
EB
= 5 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain
1)
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
h
FE
25
40
40
40
40
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 20 mA, I
B
= 2 mA
V
CEsat
-
-
0.5
V
Base emitter saturation voltage
1)
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
-
-
0.9
AC Characteristics
Transition frequency
I
Transition frequency
I
C
= 10 MHz, V
CE
= 20 V, f = 100 MHz
f
T
50
70
-
MHz
Collector-base capacitance
V
V
CB
= 20 V, f = 1 MHz
C
cb
-
-
3
pF
1
Pulse test: t < 300µs; D < 2%