Infineon Technologies N/A BC 858 B PNP Case type SOT 23 I(C) BC858BWH6327 Data Sheet

2011-09-19

2

Collector-emitter voltage 
BC857..., BC860... 
BC858..., BC859...

CEO

 

45
30

V

Collector-base voltage 
BC857..., BC860... 
BC858..., BC859...

CBO

 

50
30

Emitter-base voltage

EBO

5

Collector current

C

100

mA

Peak collector current, t

p

 

≤ 10 ms

CM

200

Total power dissipation 
T

S

 

≤ 71 °C, BC857-BC860 

S

 

≤ 135 °C, BC857BL3 

S

 

≤ 124 °C, BC857W-BC860W

tot

 

330
250
250

mW

Junction temperature

j

150

°C

Storage temperature

stg

-65 ... 150

Junction - soldering point

1)

 

BC857-BC860 
BC857BL3 
BC857W-BC860W

thJS

 

≤ 240

≤ 60

≤ 105

K/W

1

For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)