Infineon Technologies N/A BC 818-40 NPN Case type SOT 23 I(C BC818-40 Data Sheet
Product codes
BC818-40
2008-04-11
3
BC817.../BC818...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BC817...
I
C
= 10 mA, I
B
= 0 , BC818...
V
(BR)CEO
45
25
25
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0 , BC817...
I
C
= 10 µA, I
E
= 0 , BC818...
V
(BR)CBO
50
30
30
-
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5
-
-
V
Collector-base cutoff current
V
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
V
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain
1)
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.16
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.25
I
C
= 100 mA, V
CE
= 1 V, h
FE
-grp.40
I
C
= 300 mA, V
CE
= 1 V, h
FE
-grp.16
2)
I
C
= 300 mA, V
CE
= 1 V, h
FE
-grp.25
2)
I
C
= 300 mA, V
CE
= 1 V, h
FE
-grp.40
2)
I
C
= 500 mA, V
CE
= 1 V, all h
FE
-grps.
3)
h
FE
100
160
250
160
250
60
100
170
170
40
160
250
350
250
350
-
-
-
-
-
-
-
250
400
630
400
630
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
0.7
V
Base emitter saturation voltage
1)
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
1.2
1
Pulse test: t < 300µs; D < 2%
2
For all BC817 and BC818 subtypes
3
For all BC817K and BC818K subtypes