Infineon Technologies N/A BC 859-C PNP Case type SOT 23 I(C) BC859C Data Sheet
Product codes
BC859C
2011-09-19
3
BC857...-BC860...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BC857..., BC860...
I
C
= 10 mA, I
B
= 0 , BC858..., BC859...
V
(BR)CEO
45
30
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0 , BC857..., BC860...
I
C
= 10 µA, I
E
= 0 , BC858..., BC859...
V
(BR)CBO
50
30
30
-
-
-
-
-
-
Emitter-base breakdown voltage
I
I
E
= 1 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
V
CB
= 45 V, I
E
= 0
V
CB
= 30 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
-
-
0.015
5
µA
DC current gain
1)
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.A
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.B
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp.C
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.A
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.B
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp.C
h
FE
-
-
-
-
-
125
220
420
220
420
140
250
480
180
290
520
250
480
180
290
520
-
-
-
-
-
250
475
800
475
800
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
-
-
-
75
250
300
650
650
mV
Base emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
-
-
-
700
850
850
-
-
-
Base-emitter voltage
1)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
V
BE(ON)
600
-
650
-
750
820
820
1
Pulse test: t < 300µs; D < 2%