Infineon Technologies N/A BFP 193 W NPN Case type SOT 343 I( BFP193W Data Sheet

2012-04-13

1

1

2

3

4

• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• f

T

 = 8 GHz, NF

min

 = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFP193W

RCs

1 = E 2 = C 3 = E 4 = B -

-

SOT343

Maximum Ratings at T

A 

= 25 °C, unless otherwise specified

Collector-emitter voltage

CEO

12

V

Collector-emitter voltage

CES

20

Collector-base voltage

CBO

20

Emitter-base voltage

EBO

2

Collector current

C

80

mA

Base current

B

10

Total power dissipation

1)

 

S

 

≤ 66°C 

tot

580

mW

Junction temperature

J

150

°C

Ambient temperature

A

-55 ... 150

Storage temperature

Stg

-55 ... 150

Junction - soldering point

2)

thJS

≤ 145

K/W

1

TS is measured on the collector lead at the soldering point to the pcb

2

For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)