Fairchild Semiconductor N/A SS8050DTA Data Sheet

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

SS8050 Rev. B3

1 

July 2010

• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I

C

=1.5A

• Collector Power Dissipation: P

C

=2W (T

C

=25

°C)

T

a

 = 25°C unless otherwise noted

T

a

 = 25°C unless otherwise noted

V

CBO

Collector-Base Voltage

40

V

V

CEO

Collector-Emitter Voltage

25

V

V

EBO

Emitter-Base Voltage

6

V

I

C

Collector Current

1.5

A

P

C

Collector Power Dissipation

1

W

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-65 ~ 150

°C

BV

CBO

Collector-Base Breakdown Voltage

I

C

=100

µA, I

E

=0

40

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

=2mA, I

B

=0

25

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=100

µA, I

C

=0

6

V

I

CBO

Collector Cut-off Current

V

CB

=35V, I

E

=0

100

nA

I

EBO

Emitter Cut-off Current

V

EB

=6V, I

C

=0

100

nA

h

FE1

h

FE2

h

FE3

DC Current Gain

V

CE

=1V, I

C

=5mA

V

CE

=1V, I

C

=100mA

V

CE

=1V, I

C

=800mA

45
85
40

300

V

CE (sat)

Collector-Emitter Saturation Voltage

I

C

=800mA, I

B

=80mA

0.5

V

V

BE (sat)

Base-Emitter Saturation Voltage

I

C

=800mA, I

B

=80mA

1.2

V

V

BE (on)

Base-Emitter On Voltage

V

CE

=1V, I

C

=10mA

1

V

C

ob

Output Capacitance

V

CB

=10V, I

E

=0, f=1MHz

9.0

pF

f

T

Current Gain Bandwidth Product

V

CE

=10V, I

C

=50mA

100

MHz

Classification

B

C

D

h

FE2

85 ~ 160

120 ~ 200

160 ~ 300

1. Emitter   2. Base   3. Collector

TO-92

1