Fairchild Semiconductor N/A PZTA64 Data Sheet

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MPSA64 / MMBTA64 / PZTA64 Rev. B0

1 

November 2011

• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.

T

a

 = 25

°C unless otherwise noted 

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
    operations.

T

a

 = 25

°C unless otherwise noted 

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

2

.

V

CES

Collector-Emitter Voltage

-30

V

V

CBO

Collector-Base Voltage

-30

V

V

EBO

Emitter-Base Voltage

-10

V

I

C

Collector Current - Continuous

-1.2

A

T

J, 

T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

P

D

Total Device Dissipation
          Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W