Infineon Technologies N/A BFP 196 NPN Case type SOT 143 I(C) BFP196 Data Sheet
Product codes
BFP196
2007-04-20
BFP196
1
1
2
3
4
NPN Silicon RF Transistor*
•
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
•
Power amplifier for DECT and PCN systems
•
f
T
= 7.5 GHz, F = 1.3 dB at 900 MHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP196
RIs
1 = C 2 = E 3 = B 4 = E
-
-
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
150
mA
Base current
I
B
15
Total power dissipation
2)
T
S
≤
77°C
P
tot
700
mW
Junction temperature
T
j
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
3)
R
thJS
≤
105
K/W
1
Pb-containing package may be available upon special request
2
TS is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance