Infineon Technologies N/A BF 799 NPN Case type SOT 23 I(C) 3 BF799 Data Sheet
Product codes
BF799
2011-09-21
2
BF799
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-base breakdown voltage
I
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
30
-
-
Base-emitter breakdown voltage
I
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
3
-
-
Collector-base cutoff current
V
V
CB
= 20 V, I
E
= 0
I
CBO
-
-
100
nA
DC current gain
I
I
C
= 5 mA, V
CE
= 10 V
I
C
= 20 mA, V
CE
= 10 V
h
FE
35
40
40
95
100
-
250
-
Collector-emitter saturation voltage
I
I
C
= 20 mA, I
B
= 2 mA
V
CEsat
-
0.1
0.3
V
Base-emitter saturation voltage
I
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
-
-
0.95
AC characteristics
Transition frequency
I
Transition frequency
I
C
= 5 mA, V
CE
= 10 V, f = 100 MHz
I
C
= 20 mA, V
CE
= 8 V, f = 100 MHz
f
T
-
-
-
800
1100
-
-
-
MHz
Output capacitance
V
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
C
ob
-
0.96
-
pF
Collector-base capacitance
V
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.7
-
Collector-emitter capacitance
V
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.28
-
Noise figure
I
I
C
= 5 mA, V
CE
= 10 V, f = 100 MHz,
Z
S
= 50
Ω
F
-
3
-
dB
Output conductance
I
I
C
= 20 mA, V
CE
= 10 V, f = 35 MHz
g
22e
-
60
-
µS