Infineon Technologies N/A BFP 420 NPN Case type SOT 343 I(C) BFP420 Data Sheet
Product codes
BFP420
2009-12-02
BFP420
1
1
2
3
4
NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding G
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding G
ms
= 21 dB at 1.8 GHz
• Transition frequency f
T
= 25 GHz
• Gold metallization for high reliability
• SIEGET 25 GHz f
• SIEGET 25 GHz f
T
- Line
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP420
AMs
1=B
2=E
3=C
4=E
-
-
SOT343
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
T
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO
4.5
4.1
4.1
V
Collector-emitter voltage
V
CES
15
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
1.5
Collector current
I
C
35
mA
Base current
I
B
3
Total power dissipation
2)
T
S
≤ 107 °C
P
tot
160
mW
Junction temperature
T
j
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
1
Pb-containing package may be available upon special request
2
TS is measured on the collector lead at the soldering point to the pcb