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On Semiconductor N/A 2 N 3773 NPN Case type TO 3 I(C) 30 A 2N3773 Data Sheet

Product codes
2N3773
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Page of 6
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 10
1
Publication Order Number:
2N3773/D
NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase
 power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or
inverters.
Features
•
Pb−Free Packages are Available**
•
High Safe Operating Area (100% Tested) 150 W @ 100 V
•
Completely Characterized for Linear Operation
•
High DC Current Gain and Low Saturation Voltage
h
FE
 = 15 (Min) @ 8.0 A, 4.0 V
V
CE(sat)
 = 1.4 V (Max) @ I
C
 = 8.0 A, I
B
 = 0.8 A
•
For Low Distortion Complementary Designs
MAXIMUM RATINGS 
(Note 1)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
V
CEO
140
Vdc
Collector − Emitter Voltage
V
CEX
160
Vdc
Collector − Base Voltage
V
CBO
160
Vdc
Emitter  −  Base Voltage
V
EBO
7
Vdc
Collector Current
− Continuous
− Peak (Note 2)
I
C
16
30
Adc
Base Current
− Continuous
− Peak (Note 2)
I
B
4
15
Adc
Total Power Dissipation @ T
A
 = 25
°
C
Derate above 25
°
C
P
D
150
0.855
W
W/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
− 65 to +200
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 

 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R

JC
1.17
°
C/W
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−204
CASE 1−07
*Preferred devices are recommended choices for future
use and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAM
16 A COMPLEMENTARY
POWER TRANSISTORS
 140 V, 150 W
2Nxxxx
MEX
AYYWW
xxxx
= 3773 or 6609
A
= Assembly Location
YY
= Year
WW
= Work Week