Fairchild Semiconductor N/A KSA992FTA Data Sheet
Product codes
KSA992FTA
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
KSA992
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE2
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-50
mA
I
B
Base Current
-10
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= -120V, I
E
=0
-50
nA
I
CEO
Collector Cur-off Current
V
CE
= -100V, I
B
=0
-1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= -5mA, I
C
=0
-50
nA
h
FE1
h
FE2
DC Current Gain
V
CE
= -6V, I
C
= -0.1mA
V
CE
= -6V, I
C
= -1mA
150
200
200
500
500
500
800
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -6V, I
C
= -1mA
-0.55
-0.61
-0.65
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1mA
-0.09
-0.3
V
f
T
Current Gain Bandwidth Product
V
CE
= -6V, I
C
= -1mA
50
100
MHz
C
ob
Output Capacitance
V
CB
= -30V, I
E
=0, f=1MHz
2
3
pF
NV
Noise Voltage
V
CE
= -5.0V, I
C
= -1.0mA,
R
G
=100KW, G
V
= 80dB,
f = 10Hz to 1.0KHz
25
40
mV
Classification
P
F
E
h
FE2
200 ~ 400
300 ~ 600
400 ~ 800
KSA992
Audio Frequency Low Noise Amplifier
• Complement to KSC1845
1. Emitter 2. Collector 3. Base
TO-92
1