STMicroelectronics 2N3055-ST Data Sheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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STMicroelectronics PREFERRED

SALESTYPES

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COMPLEMENTARY NPN-PNP DEVICES

DESCRIPTION                                                       
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP type is MJ2955.

August 1999

V

CBO

Collector-Base Voltage (I

E

 = 0)

100

V

V

CER

Collector-Emitter Voltage (R

BE 

≤  100Ω

)

70

V

V

CEO

Collector-Emitter Voltage (I

B

 = 0)

60

V

V

EBO

Emitter-Base Voltage (I

C

 = 0)

7

V

I

C

Collector Current

15

A

I

B

Base Current

7

A

P

tot

Total Dissipation at T

c

 

≤

 25 

o

C

115

W

T

stg

Storage Temperature

-65 to 200

o

C

T

j

Max. Operating Junction Temperature

200

o

C

For PNP types voltage and current values are negative.

1

2

®

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