Kerafol N/A 2 N 5550=2 SC 2547E NPN Case type TO 92 I(C) 0.1 A 2N5550 = 2SC2547E Data Sheet
Product codes
2N5550 = 2SC2547E
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
Collector – Emitter Voltage
VCEO
140
160
Vdc
Collector – Base Voltage
VCBO
160
180
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
2N5551
V(BR)CEO
140
160
160
—
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100
µ
Adc, IE = 0 )
2N5550
2N5551
2N5551
V(BR)CBO
160
180
180
—
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10
µ
Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
2N5550
(VCB = 120 Vdc, IE = 0)
2N5551
(VCB = 100 Vdc, IE = 0, TA = 100
°
C)
2N5550
(VCB = 120 Vdc, IE = 0, TA = 100
°
C)
2N5551
ICBO
—
—
—
—
—
—
—
100
50
100
50
nAdc
µ
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
50
nAdc
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5550/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER