Fairchild Semiconductor N/A KSC1623YMTF Data Sheet
Product codes
KSC1623YMTF
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC162
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
100
mA
P
C
Collector Power Dissipation
200
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=60V, I
E
=0
0.1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
0.1
µ
A
h
FE
DC Current Gain
V
CE
=6V, I
C
=1mA
90
200
600
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA
0.15
0.3
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=100mA, I
B
=10mA 0.86
1.0
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=6V, I
C
=1mA 0.55
0.62
0.65
V
f
T
Current Gain Bandwidth Product
V
CE
=6V, I
C
=10mA
250
MHz
C
ob
Output Capacitance
V
CB
=6V, I
E
=0, f=1MHz
3
pF
Classification O
Y
G
L
h
FE
90 ~ 180
135 ~ 270
200 ~ 400
300 ~ 600
1. Base 2. Emitter 3. Collector
KSC1623
Low Frequency Amplifier & High Frequency
OSC.
OSC.
• Complement to KSA812
C 1 O
Marking
h
FE
grade
SOT-23
1
2
3