Kerafol N/A 2 N 5401 PNP Case type TO 92 I(C) 0.1 A Emi 2N5401 Data Sheet

Product codes
2N5401
Page of 8
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
2N5401
FEATURES
Low current (max. 300 mA)
High voltage (max. 150 V).
APPLICATIONS
General purpose switching and amplification
Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM280
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
160
V
V
CEO
collector-emitter voltage
open base
150
V
V
EBO
emitter-base voltage
open collector
5
V
I
C
collector current (DC)
300
mA
I
CM
peak collector current
600
mA
I
BM
peak base current
100
mA
P
tot
total power dissipation
T
amb
25
°
C
630
mW
T
stg
storage temperature
65
+150
°
C
T
j
junction temperature
150
°
C
T
amb
operating ambient temperature
65
+150
°
C