Rohm Semiconductor IMZ1AT108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMZ1AT108 Data Sheet
Product codes
IMZ1AT108
EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 1/4
General purpose transistor
(dual transistors)
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
zFeatures
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
NPN / PNP epitaxial planar silicon transistor
zEquivalent circuit
interference.
4) Mounting cost and area can be cut in half.
zStructure
NPN / PNP epitaxial planar silicon transistor
zEquivalent circuit
EMZ1 / UMZ1N
IMZ1A
(3)
(2)
(1)
(4)
(6)
(5)
Tr
2
Tr
1
(3)
(2)
(1)
(4)
(6)
(5)
Tr
2
Tr
1
zAbsolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Tr
1
Tr
2
Unit
V
CBO
60
V
50
V
V
V
CEO
V
EBO
7
I
C
mA
150
−
60
−
50
−
6
−
150
Tj
150
˚C
Tstg
−
55 to
+
150
˚C
P
C
EMZ1, UMZ1N
150 (TOTAL)
mW
IMZ1A
300 (TOTAL)
∗
1
∗
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMZ1
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
UMZ1N
Abbreviated symbol : Z1
Abbreviated symbol : Z1
Abbreviated symbol : Z1
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
IMZ1A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
0.5
1.0
1.6