STMicroelectronics N/A BD 680 PNP Case type TO 126 I(C) 4 A BD680 Data Sheet
Product codes
BD680
BD677/A/679/A/681
BD678/A/680/A/682
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
SALESTYPES
■
COMPLEMENTARY PNP - NPN DEVICES
■
MONOLITHIC DARLINGTON
CONFIGURATION
CONFIGURATION
■
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
COLLECTOR-EMITTER DIODE
APPLICATION
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
BD680,
BD680A
and
BD682
respectively.
INTERNAL SCHEMATIC DIAGRAM
R
1
T yp. = 7K
Ω
R
2
T yp.= 230
December 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
NPN
BD677/A
BD679/A
BD681
PNP
BD678/A
BD680/A
BD682
V
CBO
Collect or-Base Voltage (I
E
= 0)
60
80
100
V
V
CEO
Collect or-Emitter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collect or Current
4
A
I
CM
Collect or Peak Current
6
A
I
B
Base Current
0.1
A
P
t ot
Tot al Dissipation at T
c
≤
25
o
C
40
W
T
stg
Storage T emperat ure
-65 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
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