On Semiconductor N/A MJE 3055 T NPN Case type TO 220 AB I(C) MJE3055T Data Sheet

©

 Semiconductor Components Industries, LLC, 2013

Publication Order Number:

MJE2955T (PNP),

MJE3055T (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

•

High Current Gain − Bandwidth Product

•

These Devices are Pb−Free and are RoHS Compliant*

Collector−Emitter Voltage

V

CEO

60

Vdc

Collector−Base Voltage

V

CB

70

Vdc

Emitter−Base Voltage

V

EB

5.0

Vdc

Collector Current

I

C

10

Adc

Base Current

I

B

6.0

Adc

Total Device Dissipation

@ T

C

 = 25

°

C

Derate above 25

°

C

P

D

75

0.6

W

W/

°

C

Operating and Storage Junction
Temperature Range

T

J

, T

stg

−55 to +150

°

C

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

Thermal Resistance, Junction−to−Case

R

q

JC

1.67

°

C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

MJExx55T = Device Code

xx = 29 or 30

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MJExx55TG

AY   WW

MJE2955TG

TO−220

(Pb−Free)

50 Units / Rail

MJE3055TG

TO−220

(Pb−Free)

50 Units / Rail

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

2

3

4