Fairchild Semiconductor N/A MMBTH11 Data Sheet
Product codes
MMBTH11
MPSH11/MMBTH11, Rev. B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100
and mixer applications with collector currents in the 100
µ
A to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current - Continuous
50
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSH11
*MMBTH11
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
225
1.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
357
556
°
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MPSH11
C
E
B
TO-92
MMBTH11
C
B
E
SOT-23
Mark: 3G
2002 Fairchild Semiconductor Corporation
MPSH1
1 / MMBTH1
1