STMicroelectronics N/A BDX 53 B NPN Case type TO 220 I(C) 8 BDX53B Data Sheet
Product codes
BDX53B
BDX53B / BDX53C
BDX54B / BDX54C
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
APPLICATIONS
■
AUDIO AMPLIFIERS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.
®
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDX53B
BDX53C
PNP
BDX54B
BDX54C
V
CBO
Collector-Base Voltage (I
E
= 0)
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
100
V
V
EBO
Emitter-base Voltage (I
C
= 0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (repetitive)
12
A
I
B
Base Current
0.2
A
P
tot
Total Dissipation at T
c
≤
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
1/6