Fairchild Semiconductor N/A MMBT5179 Data Sheet

This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 

µ

A to 30 mA range in common

emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators.  Sourced from Process 40.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

V

CEO

Collector-Emitter Voltage

12

V

V

CBO

Collector-Base Voltage

20

V

V

EBO

Emitter-Base Voltage

2.5

V

I

C

Collector Current - Continuous

50

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

TA = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

350

2.8

225

1.8

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

357

556

°

C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 

1997 Fairchild Semiconductor Corporation