On Semiconductor N/A MJ 802 NPN Case type TO 3 I(C) 30 A MJ802 Data Sheet

©

 Semiconductor Components Industries, LLC, 2006

Publication Order Number:

MJ802

High−Power NPN Silicon

Transistor

This transistor is for use as an output device in complementary audio

amplifiers to 100−Watts music power per channel.

•

High DC Current Gain − h

FE

 = 25−100 @ I

C

 = 7.5 A

•

Excellent Safe Operating Area

•

Complement to the PNP MJ4502

•

Pb−Free Package is Available*

Collector−Emitter Voltage

V

CER

100

Vdc

Collector−Base Voltage

V

CB

100

Vdc

Collector−Emitter Voltage

V

CEO

90

Vdc

Emitter−Base Voltage

V

EB

4.0

Vdc

Collector Current

I

C

30

Adc

Base Current

I

B

7.5

Adc

Total Device Dissipation @ T

C

 = 25

_

C

Derate above 25

_

C

P

D

200

1.14

W

W/

_

C

Operating and Storage Junction
Temperature Range

T

J

, T

stg

−65 to +200

_

C

Thermal Resistance, Junction−to−Case

q

JC

0.875

_

C/W

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

MJ802

TO−204

100 Units / Tray

MJ802G

TO−204

(Pb−Free)

100 Units / Tray

MJ802G
AYYWW

MEX

MJ802 = Device Code
G

= Pb−Free Package

A

= Assembly Location

YY

= Year

WW

= Work Week

MEX

= Country of Origin