Nxp Semiconductors N/A BC 856 PNP Case type SOT 323 I(C) 0.2 BC856 Data Sheet
Product codes
BC856
BC 856W ... BC 860W
Semiconductor Group
3
Electrical Characteristics
at
at
T
A
= 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CE0
65
45
30
45
30
–
–
–
–
–
–
–
–
–
–
nA
µ
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
I
CB0
–
–
–
–
–
–
15
5
5
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
µ
A
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CB0
80
50
30
50
30
–
–
–
–
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E
= 1
µ
A
V
(BR)EB0
5
–
–
mV
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat
–
–
–
75
250
250
300
650
650
–
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
I
C
= 2 mA,
V
CE
= 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
h
FE
–
–
–
–
–
125
220
420
220
420
140
250
480
250
480
180
290
520
290
520
–
–
–
–
–
250
475
800
475
800
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat
–
–
–
700
850
850
–
–
–
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
V
BE
= 0
BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
BC 857W, BC 860W
BC 858W, BC 859W
V
(BR)CES
80
50
30
50
30
–
–
–
–
–
–
–
–
–
–
Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(on)
600
–
–
650
–
–
750
820
820
1)
Pulse test:
t
≤
300
µ
s,
D
= 2 %.