Infineon Technologies HF double transistor array BFS 480 NPN Case type S BFS480 Data Sheet
Product codes
BFS480
BFS480
3
Jun-27-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 6 mA,
V
CE
= 5 V,
f
= 500 MHz
f
T
5
7.5
-
GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
C
cb
-
0.23
0.4
pF
Collector-emitter capacitance
V
CE
= 5 V,
f
= 1 MHz
C
ce
-
0.1
-
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
0.23
-
Noise figure
I
C
= 1.5 mA,
V
CE
= 5 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.5
2
-
-
dB
Power gain, maximum stable
1)
I
C
= 3 mA,
V
CE
= 5 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
G
ms
-
-
18
14
-
-
Transducer gain
I
C
= 3 mA,
V
CE
= 5 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
14
9.5
-
-
1
G
ms
= |S
21
/ S
12
|