Infineon Technologies N/A BSP 50 NPN Case type SOT 223 I(C) BSP50 Data Sheet
Product codes
BSP50
2007-03-30
2
BSP50-BSP52
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
≤
17
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BSP50
I
C
= 10 mA, I
B
= 0 , BSP51
I
C
= 10 mA, I
B
= 0 , BSP52
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA, I
E
= 0 , BSP50
I
C
= 100 µA, I
E
= 0 , BSP51
I
C
= 100 µA, I
E
= 0 , BSP52
V
(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 100 µA, I
C
= 0
V
(BR)EBO
5
-
-
Collector-emitter cutoff current
V
CE
= V
CE0max
, V
BE
= 0
I
CES
-
-
10
µA
Emitter-base cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
10
µA
DC current gain
2)
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
h
FE
1000
2000
-
-
-
-
-
Collector-emitter saturation voltage
2)
I
C
= 500 mA, I
B
= 0.5 mA
I
C
= 1 A, I
B
= 1 mA
V
CEsat
-
-
-
-
1.3
1.8
V
Base emitter saturation voltage
2)
I
C
= 500 mA, I
B
= 0.5 mA
I
C
= 1 mA, I
B
= 1 A
V
BEsat
-
-
-
-
1.9
2.2
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
Pulse test: t < 300µs; D < 2%