Infineon Technologies N/A BCV 61 B NPN Case type SOT 23 I(C BCV61B Data Sheet
Product codes
BCV61B
2011-10-13
1
BCV61
NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and V
• Good thermal coupling and V
BE
matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
2
3
4
EHA00012
C2 (1)
Tr.2
Tr.1
C1 (2)
E1 (3)
E2 (4)
Type
Marking
Pin Configuration
Package
BCV61B
BCV61C
BCV61C
1Ks
1Ls
1Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
(transistor T1)
(transistor T1)
V
CEO
30
V
Collector-base voltage (open emitter)
(transistor T1)
(transistor T1)
V
CBO
30
Emitter-base voltage
V
EBS
6
DC collector current
I
C
100
mA
Peak collector current, t
p
< 10 ms
I
CM
200
Base peak current (transistor T1)
I
BM
200
Total power dissipation, T
S
= 99 °C
P
tot
300
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
Junction - soldering point
1)
R
thJS
≤170
K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)