Fairchild Semiconductor N/A BU406TU Data Sheet

© 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BU406 Rev. 1.2.1

1 

September 2013

• High-Voltage Capability

• High Switching Speed

• Low Saturation Voltage

• Horizontal deflection for TV and CRT

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

C

 = 25°C unless otherwise noted.

BU406

BU406

TO-220 3L

Rail

BU406TU

BU406

 V

CBO

 Collector-Base Voltage

400

V

 V

CEO

 Collector-Emitter Voltage

200

V

 V

EBO

 Emitter-Base Voltage

6

V

 I

C

 Collector Current (DC)

7

A

 I

CP

 Collector Current (Pulse)

 10

A

 I

B

 Base Current

4

A

 P

C

 Collector Dissipation

 60

W

 T

J

 Junction Temperature

150

°C

 T

STG

 Storage Temperature

- 55 to 150

°C

The BU406 is a 400 V 7 A Silicon Epitaxial Planar
NPN Transistor. The BU406 is designed for high
speed switching applications which utilizes the indus-
try standard TO-220 package offering flexibility in
design and excellent Power Dissipation.

1.Base    2.Collector    3.Emitter

1

TO-220