Fairchild Semiconductor N/A FZT649 Data Sheet

   

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A 
continuous.  

  

   T

A = 25°C unless otherwise noted

°C

-55 to +150

Operating and Storage Junction Temperature Range

T

J, 

T

stg

A

3

Collector Current - Continuous

I

C

V

5

Emitter-Base Voltage

V

EBO

V

35

Collector-Base Voltage

V

CBO

V

25

Collector-Emitter Voltage

V

CEO

      *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

    

NOTES:

       1) These ratings are based on a maximum junction temperature of 150°C.

       2) These are steady state limits.  The factory should be consulted on applications involving pulsed or low duty cycle operations.

      

T

A = 25°C unless otherwise noted

°C/W

62.5

Thermal Resistance, Junction to Ambient

R

θ

JA

W

2

Total Device Dissipation

P

D

      

Page 1 of  2



 1998 Fairchild Semiconductor Corporation

 

fzt649.lwpPrNC 7/10/98 revB 

Technologies