Fairchild Semiconductor N/A KSA940TU Data Sheet
Product codes
KSA940TU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA940
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
- 150
V
V
CEO
Collector-Emitter Voltage
- 150
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current
- 1.5
A
I
B
Base Current
- 0.5
A
P
C
Collector Dissipation (T
a
=25
°
C)
1.5
W
P
C
Collector Dissipation (T
C
=25
°
C)
25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= - 120V, I
E
= 0
- 10
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 10
µ
A
h
FE
DC Current Gain
V
CE
= - 10V, I
C
= - 500mA
40
75
140
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= - 500mA, I
B
= - 50mA
- 1.5
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
= - 10V, I
C
= - 500mA
- 0.65
- 0.75
- 0.85
V
f
T
Current Gain Bandwidth Product
V
CE
= - 10V, I
C
= - 500mA
4
MHz
C
ob
Output Capacitance
V
CB
= - 10V, I
E
= 0
f = 1MHz
55
pF
KSA940
Vertical Deflection Output Power Amplifier
• Complement to KSC2073
1.Base 2.Collector 3.Emitter
1
TO-220