Fairchild Semiconductor N/A D44C8 Data Sheet

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

D44C8 Rev. B2

1 

January 2010

• Sourced from process 4P.

T

A

=25°C unless otherwise noted

T

A

=25

°C unless otherwise noted

T

A

=25

°C unless otherwise noted

V

CEO

Collector-Emitter Voltage

60

V

I

C

Collector Current        - Continuous

4.0

A

T

J

, T

STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

V

(BR)CEO

Collector-Emitter Breakdown Voltage I

C 

= 100mA, I

B 

= 0

60

V

I

CES

Collector-Emitter-(Base)Short

V

CE 

= 70V, I

E 

= 0

10

μA

I

EBO

Emitter-Cutoff Current

V

EB 

= 5.0V, I

B 

= 0

100

μA

h

FE

DC Current Gain

V

CE 

= 1.0V, I

C

 = 0.2A

V

CE 

= 1.0V, I

C

 = 2.0A

40
20

120

V

CE (sat)

Collector-Emitter Saturation Voltage  I

C 

= 1.0A, I

B 

= 50mA

0.5

V

V

BE (sat)

Base-Emitter Saturation Voltage

I

C 

= 1.0A, I

B 

= 100mA

1.3

V

C

ob

Output Capacitance

V

CB

 = 10V, f = 1.0MHz

100

pF

f

T

Current Gain Bandwidth Product

I

C

 = 20mA, V

CE 

= 4.0V

40

MHz

t

ON

t

d

, Delay Time 

t

r

 ,  Rise Time

I

C

 = 1.0A, 

I

B1

 = I

B2

 = 0.1A,

V

CC 

= 30V,  tp = 25

μs

54

490

ns

t

OFF

t

s 

, Storage Time 

t

f 

,  Fall Time

636

59

ns

P

D

Total Device Dissipation

Derate above 25

°

C

60

480

W

mW/

°

C

R

θJC

Thermal Resistance, Junction to Case

2.1

°

C/W

R

θJA

Thermal Resistance, Junction to Ambient

62.5

°

C/W

1

1. Base   2. Collector   3. Emitter