Fairchild Semiconductor N/A D45H2A Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

1

TO-220

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

T

A

=25

°

C unless otherwise noted

V

CEO

Collector-Emitter Voltage

30

V

I

C

Collector Current

- Continuous

8.0

A

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ 150

°

C

V

(BR)CEO

Collector-Emitter Breakdown Voltage

I

C 

= 100mA, IB = 0

30

V

I

CBO

Collector Cut-off Current

V

CB

 = 60V, IE = 0

10

µ

A

I

EBO

Emitter Cut-off Current

V

EB

 = 5V, IC = 0

 100

µ

A

h

FE

DC Current Gain

V

CE

 = 5V, I

C

 = 8A

V

CE

 = 5V, I

C

 = 10A

V

CE

 = 5V, I

C

 = 12A

100

80
65

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 8A, I

B 

= 0.4A

1

V

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C

 = 8A, I

B

 = 0.8A 

1.5

V

f

T

Current Gain Bandwidth Product

V

CE

 = 10V, I

C

 = 500mA

25

MHz

P

D

Total Device Dissipation
Derate above 25

°

C

60

480

W

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

2.1

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

62.5

°

C/W

• This device is designed for power amplifier, regulator and switching 

circuits where speed is important.

• Sourced from process 5Q.

1. Base   2. Collector   3. Emitter