Fairchild Semiconductor N/A KSA916YTA Data Sheet
Product codes
KSA916YTA
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSA916
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-800
mA
P
C
Collector Power Dissipation
900
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -1mA I
E
=0
-120
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
=0
-120
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -1mA, I
C
=0
-5
V
I
CBO
Collector Cut-off Current
V
CB
= -120V, I
E
=0
-0.1
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
60
80
80
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
-1
V
f
T
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -100mA
120
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0, f=1MHz
40
pF
Classification
O
Y
h
FE
80 ~ 160
120 ~ 240
KSA916
Audio Power Amplifier
• Driver Stage Amplifier
• Complement to KSC2316
• Complement to KSC2316
TO-92L
1
1. Emitter 2. Collector 3. Base