Fairchild Semiconductor N/A KSA733GTA Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CBO

 Collector-Base 

Voltage 

-60

V

V

CEO

Collector-Emitter Voltage 

-50

V

V

EBO

Emitter-Base Voltage 

-5

V

I

C

Collector Current

-150

mA

P

C

Collector Power Dissipation 

250

mW

T

J 

Junction Temperature 

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

BV

CBO

Collector-Base Breakdown Voltage 

I

C

= -100

µ

A, I

E

=0 -60

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

= -10mA. I

B

=0 -50

V

BV

EBO

 

Emitter-Base Breakdown Voltage 

I

E

 = -10

µ

A. I

C

=0 - 

5

V 

I

CBO

Collector Cut-off Current

V

CB

= --60V, I

E

=0 -100

nA 

I

EBO

Emitter Cut-off Current 

V

EB

= -5V, I

C

=0 -100

nA

h

FE

 

DC Current Gain 

V

CE

= -6V, I

C

= -1mA 

40

700

V

CE 

(sat) 

Collector-Emitter Saturation Voltage 

I

C

= -100mA, I

B

= -10mA 

-0.18

-0.3

V

V

BE

 (on) 

Base-Emitter On Voltage 

V

CE

= -6V, I

C

= -1mA 

-0.50

-0.62

-0.80

V

f

T

 

Current Gain Bandwidth Product 

V

CE

= -6V, I

C

= -10mA 

50

180

MHz 

C

ob

Output Capacitance

V

CB

= -10V, I

E 

= 0, f=1MHz

2.8

pF

NF

Noise Figure

V

CE

= -6V, I

C

= -0.3mA

f=1MHz, Rs=10k

Ω

6.0

20

dB

Classification

R

O

Y

G

L

h

FE

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

• Collector-Base Voltage : V

CBO

= -60V

• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter   2. Base   3. Collector

TO-92

1