Fairchild Semiconductor N/A MMBT2222A Data Sheet

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN2222A / MMBT2222A / PZT2222A Rev. A3

1 

August 2010

• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19.

T

a

 = 25

°C unless otherwise noted 

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle 
    operations.

T

a

 = 25

°C unless otherwise noted 

* Device mounted on FR-4 PCB 1.6” 

× 1.6” × 0.06”.

** Device mounted on FR-4 PCB 36mm 

× 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

2

.

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

75

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current 

1.0

A

T

STG

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

P

D

Total Device Dissipation
Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W