Fairchild Semiconductor N/A MMBT3640 Data Sheet

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MMBT3640 Rev. 1.1.0

1 

March 2014

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25°C unless otherwise noted.

Notes:
1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or 
    low-duty-cycle operations.

(3)

Values are at

 

T

A

 = 25°C unless otherwise noted.

Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

MMBT3640

2J

SOT-23 3L

Tape and Reel

V

CEO

Collector-Emitter Voltage

-12

V

V

CBO

Collector-Base Voltage

-12

V

V

EBO

Emitter-Base Voltage

-4

V

I

C

Collector Current - Continuous

-200

mA

T

J , 

T

STG

Junction and Storage Temperature Range

-55 to +150

°C

P

D

Total Device Dissipation                          

225

mW

Derate Above T

A

 = 25°C

1.8

mW/°C

R

θJA

Thermal Resistance, Junction to Ambient

556

°C/W

This device is designed for very high-speed saturated
switching at collector currents to 100 mA. Sourced
from process 65.