Fairchild Semiconductor N/A FMMT549 Data Sheet

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

FMMT549 Rev. C1

1 

August 2009

• ThIs device is designed with high current gain and low saturation voltage 

with collector currents up to 2A continuous.

•

Sourced from process PB.

T

A

 = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
 operations

Thermal Characteristics*

* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in

2

 of 2 oz copper.

V

CEO

Collector-Emitter Voltage

-30

V

V

CBO

Collector-Base Voltage

-35

V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current  -   Continuous
                             -   Peak Pulse Current

-1
-2

A
A

T

J

Junction Temperature 

150

°C

T

STG

Storage Temperature Range

-55 to +150

°C

P

D

Total Device Dissipation, by R

θJA

    Derate above 25

°C

500

4

mW

mW/

°C

R

θJA

Thermal Resistance, Junction to Ambient

250

°C/W

1. Base   2. Emitter   3. Collector

Marking : 549