Fairchild Semiconductor N/A FMMT449 Data Sheet

   

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A 
continuous.  Sourced from Process NB. 

  

   T

A = 25°C unless otherwise noted

°C

-55 to +150

Operating and Storage Junction Temperature Range

T

J, 

T

stg

A

1
2

Collector Current - Continuous
                           - Peak Pulse Current

I

C

V

5

Emitter-Base Voltage

V

EBO

V

50

Collector-Base Voltage

V

CBO

V

30

Collector-Emitter Voltage

V

CEO

      *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

    

NOTES:

       1) These ratings are based on a maximum junction temperature of 150°C.

       2) These are steady state limits.  The factory should be consulted on applications involving pulsed or low duty cycle operations.

      

T

A = 25°C unless otherwise noted

°C/W

250

Thermal Resistance, Junction to Ambient

R

θ

JA

mW

mW/°C

500

4

Total Device Dissipation*
          Derate above 25°C 

P

D

      *Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in

2

 of 2oz copper.

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 1998Fairchild Semiconducto Corporation

 

fmmt449.lwpPrNB revA

C

          E

B