Fairchild Semiconductor N/A MMBT100 Data Sheet

© 2008 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

PN100/PN100A/MMBT100/MMBT100A Rev. C1

1 

October 2008

• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

T

A

=25

°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” 

× 1.6”  ×  0.06."

V

CEO

Collector-Emitter Voltage

45

V

CBO

Collector-Base Voltage

75

V

EBO

Emitter-Base Voltage

6.0

I

C

Collector current

- Continuous

500

T

J

, T

stg

Junction and Storage Temperature

-55 ~ +150

P

D

Total Device Dissipation
Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

°C/W

TO-92

1

1. Emitter   2. Base   3. Collector

Mark: PN100/PN100A

SOT-23

B

E

C