Fairchild Semiconductor N/A KST2907AMTF Data Sheet
Product codes
KST2907AMTF
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST290
7A
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
-60
V
V
CEO
Collector-Emitter Voltage
-60
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-600
mA
P
C
Collector Power Dissipation
350
mW
T
STG
Storage Temperature
150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -10
µ
A, I
E
=0
-60
V
BV
CEO
* Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
=0
-60
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
µ
A, I
C
=0
-5
V
I
CBO
Collector Cut-off Current
V
CB
= -50V, I
E
=0
-0.01
µ
A
h
FE
DC Current Gain
V
CE
= -10V, I
C
= -0.1mA
V
CE
= -10V, I
C
= -1.0mA
V
CE
= -10V, I
C
= -10mA
*V
CE
= -10V, IC= -150mA
*V
CE
= -10V, I
C
= -500mA
75
100
100
100
100
100
50
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-0.4
-1.6
-1.6
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
-1.3
-2.6
-2.6
V
V
V
f
T
Current Gain Bandwidth Product
I
C
= -50mA, V
CE
= -20V
f=100MHz
200
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0, f=1.0MHz
8
pF
t
ON
Turn On Time
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
50
ns
t
OFF
Turn Off Time
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
= -15mA
110
ns
KST2907A
General Purpose Transistor
2 F
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3