Fairchild Semiconductor N/A BD240CTU Data Sheet
Product codes
BD240CTU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD240/
A/B/
C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=350
µ
s, duty Cycle
≤
2.0% Pulsed
Symbol
Parameter
Value
Units
V
CEO
Collector-Base Voltage
: BD240
: BD240A
: BD240B
: BD240C
: BD240A
: BD240B
: BD240C
- 45
- 60
- 80
- 60
- 80
- 100
V
V
V
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD240
: BD240A
: BD240B
: BD240C
: BD240A
: BD240B
: BD240C
- 55
- 70
- 90
- 70
- 90
- 115
V
V
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 2
A
I
CP
*Collector Current (Pulse)
- 4
A
I
B
Base Current
- 0.6
A
P
C
Collector Dissipation ( T
C
=25
°
C)
30
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD240
: BD240A
: BD240B
: BD240C
: BD240A
: BD240B
: BD240C
I
C
= - 30mA, I
B
= 0
- 45
- 60
- 80
- 60
- 80
- 100
V
V
V
V
V
V
V
I
CEO
Collector Cut-off Current : BD240/A
: BD240B/C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
- 0.3
mA
mA
mA
I
CES
Collector Cut-off Current : BD240
: BD240A
: BD240B
: BD240C
: BD240B
: BD240C
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1
mA
h
FE
* DC Current Gain
V
CE
= - 4V,I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
40
15
15
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 1A , I
B
= - 0.2A
- 0.7
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 4V, I
C
= - 1A
- 1.3
V
BD240/A/B/C
Medium Power Linear and Switching
Applications
Applications
• Complement to BD239/A/B/C respectively
1.Base 2.Collector 3.Emitter
1
TO-220