Fairchild Semiconductor N/A BD17610STU Data Sheet
Product codes
BD17610STU
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
BD176/
178/
180
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
h
FE
Classificntion
* Classification 16: Only BD 176
Symbol
Parameter
Value
Units
V
CBO
*Collector-Base Voltage
: BD176
: BD178
: BD180
: BD180
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD176
: BD178
: BD180
: BD180
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 3
A
I
C
*Collector Current (Pulse)
- 7
A
P
C
Collector Dissipation (T
C
=25
°
C)
30
W
R
θ
ja
Junction to Ambient
70
°
C/W
R
θ
jc
Junction to Case
8.5
°
C/W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD176
: BD178
: BD180
: BD178
: BD180
I
C
= - 100mA, I
B
= 0
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
I
CBO
Collector Cut-off Current
: BD176
: BD178
: BD180
: BD178
: BD180
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
- 100
- 100
- 100
- 100
- 100
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1
mA
h
FE1
h
FE2
* DC Current Gain
V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
40
15
15
250
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= -1 A , I
B
= - 0.1A
- 0.8
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= - 2V, I
C
= -1 A
- 1.3
V
f
T
Current Gain Bandwidth Product
V
CE
= -10V, I
C
= - 250mA
3
MHz
Classification
6
10
16
h
FE1
40 ~ 100
63 ~ 160
100 ~ 250
BD176/178/180
Medium Power Linear and Switching
Applications
Applications
• Complement to BD 175/177/179 respectively
1
TO-126
1. Emitter 2.Collector 3.Base