Fairchild Semiconductor N/A KST92MTF Data Sheet
Product codes
KST92MTF
KST92 — PNP Ep
it
axial Silico
n T
ran
sistor
sistor
© 2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KST92 Rev. 1.1.0
July 2014
KST92
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Thermal Characteristics
Values are at
T
A
= 25°C unless otherwise noted.
Part Number
Marking
Package
Packing Method
KST92MTF
2D
SOT-23 3L
Tape and Reel
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
-300
V
V
CEO
Collector-Emitter Voltage
-300
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current - Continuous
-500
mA
T
J ,
T
STG
Junction and Storage Temperature Range
-55 to +150
°C
Symbol
Parameter
Max.
Unit
P
C
Collector Power Dissipation
350
mW
R
θJA
Thermal Resistance, Junction to Ambient
357
°C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3