Fairchild Semiconductor N/A KST10MTF Data Sheet
Product codes
KST10MTF
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST10
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
•
Refer to KSP10 for graphs
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
3
V
P
C
Collector Power Dissipation
350
mW
T
STG
Storage Temperature
150
°
C
R
TH
(j-a)
Thermal Resistance junction to Ambient
357
°
C/W
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
µ
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
25
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
µ
A, I
C
=0
3
V
I
CBO
Collector Cut-off Current
V
CB
=25V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
BE
=2V, I
C
=0
100
nA
h
FE
DC Current Gain
V
CE
=10V, I
C
=4mA
60
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=4mA, I
B
=0.4mA
0.5
V
V
BE
Base-Emitter On Voltage
V
CE
=10V, I
C
=4mA
0.95
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=4mA, f=100MHz
650
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.7
pF
C
rb
Common-Base Feedback Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.65
pF
C
c·rbb´
Collector Base Time Constant
V
CB
=10V, I
C
=4mA, f=31.8MHz
9
pF
KST10
VHF/UHF Transistor
3 E
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3