Fairchild Semiconductor N/A MJD2955TF Data Sheet

©2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300ms, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

 - 70

V

 V

CEO

 Collector-Emitter Voltage

 - 60

V

 V

EBO

 Emitter-Base Voltage

  - 5

V

 I

C

 Collector Current

 - 10

A

 I

B

 Base Current

  - 6

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

  20

W

 Collector Dissipation (T

a

=25

°

C)

1.75

W

 T

J

 Junction Temperature

 150

°

C

 T

STG

 Storage Temperature

- 55 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

 I

C 

= - 30mA, I

B 

= 0

-60

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= - 30V, I

E 

= 0

 - 50

µ

A

 I

CBO

 Collector Cut-off Current

 V

CB 

= - 70V, I

E 

= 0

  - 2

mA

 I

EBO

 Emitter Cut-off Current

 V

EB 

= - 5V, I

C 

= 0

- 0.5

mA

 h

FE

* DC Current Gain

 V

CE 

= - 4V, I

C 

= - 4A

 V

CE 

= - 4V, I

C 

= -10A

 20

  5

 100

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= - 4A, I

B 

=  - 0.4A

 I

C 

= - 10A, I

B 

= - 3.3A

- 1.1

  - 8

V
V

 V

BE

(on)

* Base-Emitter ON Voltage

 V

CE 

= - 4V, I

C 

= - 4A

-1.8

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= - 10V, I

C 

= - 500mA

  2

MHz

• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product: 

f

T

 = 2MHz (MIN), I

C

 = -500mA

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1