Fairchild Semiconductor N/A KSP2907ATA Data Sheet

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSP2907A Rev. E

tm

September 2006

• Collector-Emitter Voltage: V

CEO

= 60V

• Collector Power Dissipation: P

C 

(max)=625mW

• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)

• Non suffix “-C” means a Side Collector (1.Emitter 2.Base  3.Collector)

• Available as PN2907A

 

 
 

T

a

 = 25

°C unless otherwise noted

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
  2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

T

a

=25

°C unless otherwise noted

Note1. Infinite heat sink.
Note2. Minimum Land pad size.

T

a

 = 25°C unless otherwise noted

* DC Item are tested by Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

V

CBO

Collector-Base Voltage

-60

V

V

CEO

Collector-Emitter Voltage

-60

V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector current

-600

mA

T

J

Junction Temperature

+150

°C

T

stg

Storage Temperature

-55 ~ +150

°C

P

C

Collector Power Dissipation, by R

θJA

625

mW

R

θJC

Thermal Resistance, Junction to Case(note1)

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient(note2)

200

°C/W

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = -10

µA, I

E

 = 0

-60

V

V

(BR)CEO

Collector-Emitter Breakdown Voltage

I

C

 = -10mA, I

B

 = 0

-60

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = -10

µA, I

C

 = 0

-5.0

V

I

CBO

Collector Cutoff Current

V

CB

 = -50V, I

E

 = 0

-10

nA

h

FE

DC Current Gain

V

CE

 = -10V, I

C

 = -0.1mA, 

V

CE

 = -10V, I

C

 = -1mA, 

V

CE

 = -10V, I

C

 = -10mA, 

V

CE

 = -10V, I

C

 = -150mA, 

V

CE

 = -10V, I

C

 = -500mA, 

75

100
100
100

50

300

V

CE(sat)

Collector-Emitter Saturation Voltage

I

C

 = -150mA, I

B

 = -15mA

I

C

 = -500mA, I

B

 = -50mA

-0.4
-1.6

V
V

V

BE(sat)

Base-Emitter Saturation Voltage

I

C

 = -150mA, I

B

 = -15mA

I

C

 = -500mA, I

B

 = -50mA

-1.3
-2.6

V
V

C

obo

Output Capacitance

V

CB 

= -10V, I

E

 = 0, f = 1.0MHz

8

pF

f

T

Current Gain Bandwidth Product

I

C

 = -50mA, V

CE

 = -20V, 

f = 100MHz

200

MHz

t

ON

Turn On Time

V

CC

= -30V, I

C

 = -150mA, I

B1

= -15mA

45

ns

t

OFF

Turn Off Time

V

CC

= -6V, I

C

 = -150mA,I

B1

= I

B1 

= -15mA

100

ns

 KSP2907A    : 1. Emitter  2. Base         3. Collector

 KSP2907AC : 1. Emitter   2. Collector  3. Base

TO-92

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