Fairchild Semiconductor N/A KSP2222ATF Data Sheet
Product codes
KSP2222ATF
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN Genera
l Purpose Amplifier
tm
July 2006
KSP2222A
NPN General Purpose Amplifier
Features
• Collector-Emitter Voltage: V
CEO
= 40V
• Collector Power Dissipation: P
C
(max)=625mW
• Available as PN2222A
Absolute Maximum Ratings *
T
a
= 25
°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
a
=25
°C unless otherwise noted
Electrical Characteristics *
T
a
= 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width
≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
75
V
V
CEO
Collector-Emitter Voltage
40
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector current
600
mA
T
J
Junction Temperature
+150
°C
T
stg
Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Max
Units
P
C
Collector Power Dissipation, by R
θJA
625
mW
R
θJC
Thermal Resistance, Junction to Case
83.3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient
200
°C/W
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µA, I
E
= 0
75
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA, I
B
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µA, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 60V, I
E
= 0
0.01
µA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0V, I
C
= 0
10
nA
h
FE
DC Current Gain
V
CE
= 10V, I
C
= 0.1mA,
V
CE
= 10V, I
C
= 1mA,
V
CE
= 10V, I
C
= 10mA,
V
CE
= 10V, I
C
= 150mA,
V
CE
= 10V, I
C
= 500mA,
35
50
75
50
75
100
40
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.3
1
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
0.6
1.2
2.0
2.0
V
V
V
f
T
Current Gain Bandwidth Product
I
C
= 20mA, V
CE
= 20V, f = 100MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1.0MHz
8
pF
t
ON
Turn On Time
V
CC
= 30V, I
C
= 150mA,
I
B1
= 15mA, V
BE(off)
= 0.5V
35
ns
t
OFF
Turn Off Time
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B1
= 15mA
285
ns
NF
Noise Figure
I
C
= 100
µA, V
CE
= 10V,
R
S
= 1K
Ω , f = 1.0KHz
4
dB
1. Emitter 2. Base 3. Collector
TO-92
1 2 3