International Rectifier IRG4IBC30FD IGBT N channel TO 220 11A 600V IRG4IBC30FD Data Sheet

             

V

CES

Collector-to-Emitter Voltage

600

V

I

C

 @ T

C

 = 25°C

Continuous  Collector  Current

20.3

I

C

 @ T

C

 = 100°C

Continuous  Collector  Current

11

I

CM

Pulsed Collector Current

  

120

A

I

LM

Clamped Inductive Load Current 

‚

120

I

F

 @ T

C

 = 100°C

Diode Continuous Forward Current

8.5

I

FM

Diode Maximum Forward Current

120

Visol

RMS Isolation Voltage, Terminal to Case

…

2500

V

V

GE

Gate-to-Emitter Voltage

± 20

P

D

 @ T

C

 = 25°C

Maximum Power Dissipation

45

P

D

 @ T

C

 = 100°C

Maximum Power Dissipation

18

T

J

Operating  Junction  and

-55  to +150

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

IRG4IBC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

E

G

n -ch an n el

C

V

CES

 = 600V

V

CE(on) typ.

 = 1.59V

@V

GE

 = 15V, I

C

 = 17A

 Fast CoPack IGBT

3/26/99

PD- 91751A

W

R

θ

JC

Junction-to-Case - IGBT

–––

2.8

R

θ

JC

Junction-to-Case - Diode

–––

4.1

°C/W

R

θ

JA

Junction-to-Ambient,  typical socket mount

–––

65

Wt

Weight

2.0 (0.07)

–––

g (oz)

www.irf.com

1

TO-220 FULLPAK

•  Very Low 1.59V votage drop
•  2.5kV,  60s insulation voltage 

…

•  4.8 mm creapage distance to heatsink
•  Fast: Optimized for medium operating
   frequencies ( 1-5 kHz in hard switching, >20
  kHz in resonant mode).
•  IGBT co-packaged with HEXFRED

TM 

 ultrafast,

  ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
•  Industry standard Isolated TO-220 Fullpak

TM

   outline

• Simplified assembly
• Highest efficiency and power density
• HEXFRED

TM  

antiparallel Diode minimizes

  switching losses and EMI